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little foot plus power mosfet

asynchronous dc/dc buck SI4845DY vishay siliconix new product document number: 73415 s-51110?rev. b, 13-jun-05 www.vishay.com 1 p-channel 20-v (d-s) mosfet with schottky diode v ds (v) r ds(on) ( ) i d (a) a q g (typ) ? 20 0.210 @ v gs = ?4.5 v ? 2.7 29 ? 20 0.345 @ v gs = ?2.5 v ?2.1 2.9 v ka (v) v f (v) diode forward voltage i f (a) a 20 0.50 v @ 1 a 2.4 k a ak a k sd g d so-8 5 6 7 8 top view 2 3 4 1 s g d p-channel mosfet ordering information: SI4845DY-t1?e3 (lead (pb)?free)

parameter symbol limit unit drain-source v oltage (mosfet) v ds ?20 reverse voltage (schottky) v ka ?20 v gate-source voltage (mosfet) v gs 12 v t c = 25 c ? 2.7 continuous drain current (t j = 150 c) (mosfet) t c = 70 c i d ?2.1 c on ti nuous d ra i n c urren t (t j = 150 c) (mosfet) t a = 25 c i d ?2.1 b, c t a = 70 c ?1.7 b, c pulsed drain current (mosfet) i dm ?7 a continuous source current (mosfet diode conduction) t c = 25 c i s ?2.4 continuous source current (mosfet diode conduction) t a = 25 c i s ?1.9 b, c average foward current (schottky) i f ? 1 b pulsed foward current (schottky) i fm ?7 t c = 25 c 2.75 maximum power dissipation (schottky) t c = 70 c p d 1.75 w maximum power dissipation (schottky) t a = 25 c p d 1.75 b, c w t a = 70 c 1.1 b, c operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit maximum junction-to-ambient (mosfet and schottky) r thja 60 71.5 c/w maximum junction-to-foot (drain) (mosfet and schottky) r thjf 35 45 c/w notes a. based on t c = 25 c. b. surface mounted on fr4 board. c. t 10 sec. d. maximum under steady state conditions is 120 c/w.
SI4845DY vishay siliconix new product www.vishay.com 2 document number: 73415 s-51110?rev. b, 13-jun-05

parameter symbol test condition min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = ?250 a ?20 v v ds temperature coefficient v ds/tj i d = ?250 a ?25 mv/ c v gs(th) temperature coefficient v gs(th)/tj i d = ?250 a 2.6 mv/ c gate threshold voltage v gs(th) v ds = v gs , i d = ?250 a ?0.5 ?1.5 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = ?20 v, v gs = 0 v ?1 a zero gate voltage drain current i dss v ds = ?20 v, v gs = 0 v, t j = 75 c ?10 a on-state drain current a i d(on) v ds ?5 v, v gs = ?4.5 v ?5 a drain source on state resistance a r v gs = ?4.5 v, i d = ?2 a 0.175 0.210 drain-source on-state resistance a r ds(on) v gs = ?2.5 v, i d = ?1 a 0.285 0.345 forward transconductance a g fs v ds = ?15 v, i d = ?2 a 3.5 s dynamic b input capacitance c iss 312 output capacitance c oss v ds = ?10 v, v gs = 0 v, f = 1 mhz 63 pf reverse transfer capacitance c rss 33 p total gate charge q g 2.9 4.5 gate-source charge q gs v ds = ?10 v, v gs = ?4.5 v, i d = ?4 a 0.72 nc gate-drain charge q gd 0.65 gate resistance r g f = 1 mhz 5.5 turn-on delay time t d(on) 8 13 rise time t r v dd = ?10 v, r l = 2.5 40 60 turn-off delay time t d(off) v dd = 10 v , r l = 2 . 5 i d ?4 a, v gen = ?4.5 v, r g = 1 17 26 fall time t f 11 18 ns turn-on delay time t d(on) 3 6 ns rise time t r v dd = ?10 v, r l = 2.5 10 16 turn-off delay time t d(off) v dd = 10 v , r l = 2 . 5 i d ?4 a, v gen = ?10 v, r g = 1 12 20 fall time t f 8 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ?2.7 a pulse diode forward current a i sm ?7 a body diode voltage v sd i s = ?1.9 a, v gs = 0 v ?0.85 ?1.2 v body diode reverse recovery time t rr 24 40 ns body diode reverse recovery charge q rr i f = ? 2 a di/dt = 100 a/ st j =25 c 14 20 nc reverse recovery fall time t a i f = ?2 a, di / dt = 100 a / s, t j = 25 c 14 ns reverse recovery rise time t b 10 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI4845DY vishay siliconix new product document number: 73415 s-51110?rev. b, 13-jun-05 www.vishay.com 3

parameter symbol test condition min typ max unit forward v oltage drop v f i f = 1 a 0.45 0.50 v f orwar d v o l tage d rop v f i f = 1 a, t j = 125 c 0.36 0.42 v v r = 30 v 0.04 0.1 maximum reverse leakage current i rm v r = 30 v, t j = 75 c 0.1 2 ma maximum reverse leakage current i rm v r = 30 v, t j = 125 c 2 10 ma junction capacitance c t v r = 10 v 62 pf stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extend ed periods may affect device reliability.
SI4845DY vishay siliconix new product www.vishay.com 4 document number: 73415 s-51110?rev. b, 13-jun-05

0.0 0.1 0.2 0.3 0.4 0.5 0123456 0 2 4 6 8 10 0.0 1.3 2.6 3.9 5.2 6.5 0.6 0.8 1.0 1.2 1.4 1.6 ?50.0 ?25.0 0.0 25.0 50.0 75.0 100.0 125.0 150.0 0 50 100 150 200 250 300 350 400 450 048121620 c rss c oss c iss i d = 4 a v gs = 2.5 v gate charge on-resistance vs. drain current and gate voltage ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) v gs = 4.5 v r ds(on) ? on-resistance (normalized) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5 v 25 c t c = 125 c ?55 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d r ds(on) ? on-resistance (m ) v gs = 4.5 v v gs = 4 v v gs = 3.5 v v gs = 3 v v gs = 2.5 v v gs = 2 v v ds = 5 v v ds = 15 v v ds = 10 v v gs = 4.5 v v gs = 2.5 v
SI4845DY vishay siliconix new product document number: 73415 s-51110?rev. b, 13-jun-05 www.vishay.com 5

0.0 0.2 0.4 0.6 0.8 1.0 012345 1.0 1.2 0.01 1 10 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c source-drain diode forward voltage v sd ? source-to-drain voltage (v) ? source current (a) i s on-resistance vs. gate-to-source voltage v gs ? gate-to-source voltage (v) ?0.2 ?0.1 0.0 0.1 0.2 0.3 0.4 ?50 ?25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage t j ? temperature ( c) 0 30 50 10 20 power (w) time (sec) 40 110 0.1 0.01 0.001 single pulse power, junction-to-ambient r ds(on) ? drain-to-source on-resistance ( ) v gs(th) (v) safe operating area, junction-to-ambient 10 1 0.1 1 10 100 0.01 ? drain current (a) i d 0.1 1 ms t a = 25 c single pulse 10 ms 100 ms dc *limited by r ds(on) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 1 s 10 s t a = 25 c t a = 150 c 1 0.1 i d = 5 ma
SI4845DY vishay siliconix new product www.vishay.com 6 document number: 73415 s-51110?rev. b, 13-jun-05

0.00 0.25 0.50 0.75 1.00 1.25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 current de-rating* power de-rating, junction-to-ambient i d ? drain current (a) t c ? case temperature ( c) t c ? case temperature ( c) power dissipation (w) *the power dissipation p b is based on t j(max) = 175 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the packa ge limit. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 power de-rating, junction-to-foot t c ? case temperature ( c) power dissipation (w)
SI4845DY vishay siliconix new product document number: 73415 s-51110?rev. b, 13-jun-05 www.vishay.com 7

10 ?3 10 ?2 110 10 ?1 10 ?4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 10 ?3 10 ?2 1 10 600 10 ?1 10 ?4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized ef fective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 120 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SI4845DY vishay siliconix new product www.vishay.com 8 document number: 73415 s-51110?rev. b, 13-jun-05

? junction capacitance (pf) 0.5 0.6 0.01 1 3 forward v oltage drop v f ? forward voltage drop (v) ? forward current (a) i f 0 0.1 0.2 0.3 0.4 t j = 25 c t j = 150 c capacitance 0 50 100 150 200 250 048121620 v ka ? reverse voltage (v) 125 150 0.0001 1 20 reverse current vs. junction t emperature t j ? junction temperature ( c) ? reverse current (ma) i r 0 255075100 c t c iss 10 v 0.001 0.01 0.1 10 0.1 20 v vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?73415 .
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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